40V PNP LOW SATURATION TRANSISTOR IN SOT23

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.\n\n •BVCEO > -40V\n•ICM = -3A Peak Pulse Current\n•RCE(sat) = 90mΩ at 0.5A for a Low Equivalent On-Resistance\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•The DSS5240TQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, ;

Diodes

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 2A SOT23-3

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

文件：176.86 Kbytes 页数：5 Pages

DIODES

美台半导体

40V PNP LOW SATURATION TRANSISTOR IN SOT563

Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • IC = -1.8A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Collector-Emitter Saturation Voltage • Totally Lead-Fr

文件：439.57 Kbytes 页数：7 Pages

DIODES

美台半导体

40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra Small Surface Mount Package • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free, Green Device (Note 2) • ESD rating: 400V-MM, 8KV-HBM

文件：151.25 Kbytes 页数：6 Pages

DIODES

美台半导体