DSS5240TQ中文资料40V PNP LOW SATURATION TRANSISTOR IN SOT23数据手册Diodes规格书

描述 Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

特性 Features

•BVCEO > -40V
•ICM = -3A Peak Pulse Current
•RCE(sat) = 90mΩ at 0.5A for a Low Equivalent On-Resistance
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•The DSS5240TQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

应用 Application

• Gate Driving MOSFETs and IGBTs
• Load Switch
• DC-DC Converters
• Battery Charging

简介

DSS5240TQ属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由Diodes制造生产的DSS5240TQ晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。