DUAL PNP LOW VCE TRANSISTOR

文件：589.3 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL PNP LOW VCE TRANSISTOR

文件：589.3 Kbytes 页数：7 Pages

DIODES

美台半导体

Dual PNP, 60V, 1A, DFN2020-6

BVCEO > -60V\nIC = -1A high Continuous Collector Current\nRCE(sat) = 200mΩ for a Low Equivalent On-Resistance\nLow Saturation Voltage VCE(sat) < 340mV @ 1A\nPD up to 2.47W for power demanding applications\nRθJA efficient, 40% lower than SOT26\nLow profile 0.6mm high package for thin applications;

Diodes

美台半导体

60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

文件：117.83 Kbytes 页数：6 Pages

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -60V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Epitaxial Planar Die Construction • Ideal for Medium Power Amplifica

文件：383.15 Kbytes 页数：6 Pages

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, VCE(SAT) Complementary NPN Type Available (DSS4160U) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2)

文件：117.6 Kbytes 页数：5 Pages

DIODES

美台半导体