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DS310H-55B271M250

FERRITE BEAD INDUCTORS, EMI SUPPRESSION FILTER COMPACT DISC-TYPE

Based on more than 30 years of ceramic and ferrite technology experience, Murata Electronics’ full range of leaded EMI filters have been designed to meet today’s electronic industry requirements. Murata’s leaded devices consist of ferrite bead inductors, feed-thru capacitors, 3 terminal capacitor

文件:840.63 Kbytes 页数:22 Pages

MuRata

村田

DS310W

丝印:K310;Package:SOD-123FL;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件:2.53437 Mbytes 页数:4 Pages

UNSEMI

优恩半导体

DS310W

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Ideally Suited for Automatic Assembly ● Low Power Loss, High Efficiency ● Surge Overload Rating to 2 0A Peak ● For Use in Low Voltage Application ● Guard Ring Die Construction ● Plastic Case Material has UL Flammability Classification Rating 94V-O Mec

文件:138.3 Kbytes 页数:2 Pages

ZSELEC

淄博圣诺

DS310W

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features e Schottky Barrier Chip © Ideally Suited for Automatic Assembly ® Low Power Loss, High Efficiency e Surge Overload Rating to 2 0A Peak ® For Use in Low Voltage Application ® Guard Ring Die Construction ® Plastic Case Material has UL Flammability Classification Rating

文件:1.21711 Mbytes 页数:3 Pages

TECHPUBLIC

台舟电子

DS310W

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

文件:564.93 Kbytes 页数:5 Pages

AITSEMI

创瑞科技

DS310W

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

文件:564.93 Kbytes 页数:5 Pages

AITSEMI

创瑞科技

DS312W

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

文件:564.93 Kbytes 页数:5 Pages

AITSEMI

创瑞科技

DS312W

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

文件:564.93 Kbytes 页数:5 Pages

AITSEMI

创瑞科技

DS312W

丝印:K312;Package:SOD-123FL;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件:2.53437 Mbytes 页数:4 Pages

UNSEMI

优恩半导体

DS315W

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Ideally Suited for Automatic Assembly ● Low Power Loss, High Efficiency ● Surge Overload Rating to 2 0A Peak ● For Use in Low Voltage Application ● Guard Ring Die Construction ● Plastic Case Material has UL Flammability Classification Rating 94V-O Mec

文件:138.3 Kbytes 页数:2 Pages

ZSELEC

淄博圣诺

技术参数

  • VRRS V:

    70

  • VDC V:

    100

  • IF(AV) A:

    3

  • IFSM A:

    80

  • VF * V:

    0.85

  • IR(MA)25℃:

    0.3

  • IR(MA)100℃:

    5

  • RθJL* ℃/W:

    160

  • Tj℃:

    80

  • Tstg℃:

    -55℃~﹢150℃

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更多DS31供应商 更新时间2025-10-4 16:18:00