DS2012SF60

STANDARD RECOVERY DIODE

FEATURES ➤Widecurrentrange ➤Highvoltageratingsupto6000V ➤Highsurgecurrentcapabilities ➤Diffusedjunction TYPICALAPPLICATIONS ➤Converters ➤Powersupplies ➤Machinetoolcontrols ➤Highpowerdrives ➤Mediumtractionapplications

DS2015XS

DiskStation DS2015xs

●●Excellentperformanceof 1,930.18MB/ssequentialread throughputand54,654.84 sequentialreadIOPS1 ●●2x10GbpsSFP+portsand 2x1GbpsRJ-45portswith FailoverandLinkAggregation support ●●Scaleupto20driveswith SynologyDX12152 ●●ExpandableRAMmodule(up to8GB) ●●

DS2016

2k x 8 3V/5V Operation Static RAM

DESCRIPTION TheDS20162kx83V/5VOperationStaticRAMisa16,384-bit,low-power,fullystaticrandomaccessmemoryorganizedas2048wordsby8bitsusingCMOStechnology.Thedeviceoperatesfromasinglepowersupplywithavoltageinputbetween2.7and5.5volts.Thechipenableinput(CE

DS2016-100

2k x 8 3V/5V Operation Static RAM

DESCRIPTION TheDS20162kx83V/5VOperationStaticRAMisa16,384-bit,low-power,fullystaticrandomaccessmemoryorganizedas2048wordsby8bitsusingCMOStechnology.Thedeviceoperatesfromasinglepowersupplywithavoltageinputbetween2.7and5.5volts.Thechipenableinput(CE

DS2016-150

2k x 8 3V/5V Operation Static RAM

DESCRIPTION TheDS20162kx83V/5VOperationStaticRAMisa16,384-bit,low-power,fullystaticrandomaccessmemoryorganizedas2048wordsby8bitsusingCMOStechnology.Thedeviceoperatesfromasinglepowersupplywithavoltageinputbetween2.7and5.5volts.Thechipenableinput(CE

DS2016

2k x 8 3V/5V Operation Static RAM

DS2016-100+

Package：24-DIP（0.600"，15.24mm）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 16KBIT PARALLEL 24DIP

DS2016-150

Package：24-DIP（0.600"，15.24mm）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 16KBIT PARALLEL 24DIP

DS2016R-100+

Package：24-SOIC（0.295"，7.50mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 16KBIT PARALLEL 24SOIC