DS2016-100集成电路（IC）的存储器规格书PDF中文资料

DESCRIPTION

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications.

FEATURES

■ Low-power CMOS design

■ Standby current

- 50 nA max at tA = 25°C VCC = 3.0V

- 100 nA max at tA = 25°C VCC = 5.5V

- 1 µA max at tA = 60°C VCC = 5.5V

■ Full operation for VCC = 5.5V to 2.7V

■ Data retention voltage = 5.5V to 2.0V

■ Fast 5V access time

- DS2016 - 100 100 ns

- DS2016 - 150 150 ns

■ Reduced-speed 3V access time

- DS2016 - 100 250 ns

- DS2016 - 150 250 ns

■ Operating temperature range of -40°C to +85°C

■ Full static operation

■ TTL compatible inputs and outputs over voltage range of 5.5V to 2.7 volts.

■ Available in 24-pin DIP and 24-pin SOIC packages

■ Suitable for both battery operated and battery backup applications