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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1350AB	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350AB-100	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350AB-70	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350ABP-100-IND	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350ABP-70-IND	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350W	文件：107.99 Kbytes Page：11 Pages	3.3V 4096K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such 文件：107.99 Kbytes 页数：11 Pages	Dallas	Dallas
DS1350W-150	文件：107.99 Kbytes Page：11 Pages	3.3V 4096K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such 文件：107.99 Kbytes 页数：11 Pages	Dallas	Dallas
DS1350WP-150-IND	文件：107.99 Kbytes Page：11 Pages	3.3V 4096K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such 文件：107.99 Kbytes 页数：11 Pages	Dallas	Dallas
DS1350Y	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas
DS1350Y-70	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 页数：12 Pages	Dallas	Dallas

技术参数

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
Battery Monitor
VSUPPLY (min)(V)：
3
VSUPPLY (max)(V)：
3.6
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
PWRCP/34
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$61.22 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	DS1350WP-150+	MAXIM	13+	PWRCP	3758	原装分销	询价
深圳市一线半导体有限公司	DS1350W-120	DALLAS	24+		20000		询价
深圳市福田区绿盛电子商行	DS1350W-100/120	DAL	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市弘为电子有限公司	DS1350W-100	DALLAS	24+	DIP	5850	原装现货假一罚十	询价
深圳市星佑电子有限公司	DS1350WP-150	DALLAS	05+	原厂原装	4602	只做全新原装真实现货供应	询价
深圳市富诚威科技有限公司	DS1350W-120	DALLAS	25+		2645	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市佳鑫美电子科技有限公司	DS1350W-120	DALLAS	25+		2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市振宏微科技有限公司	DS1350WP-150+	MAXIM	23+	PWRCP	8888	专做原装正品,假一罚百!	询价
深圳市赛尔通科技有限公司	DS1350W-120	DALLAS	23+	DIP	65480		询价
深圳市粤骏腾电子科技有限公司	DS1350WP-100+	MAXIM/美信	24+	SSOPQFN	25050	原厂支持公司优势现货	询价

更多DS1350供应商更新时间2025-11-3 9:01:00

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