256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：211 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

文件：217.66 Kbytes 页数：10 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

文件：386.88 Kbytes 页数：9 Pages

Maxim

美信

256k非易失SRAM，带有电池监控器

DS1330 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。此外，DS1330器件具有监视VCC状态和内部锂电池状态的专用电路。PowerCap模块封装的DS1330器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。可用来替代32k x 8 SRAM、EEPROM或闪存器件。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 当VCC电压跌落时，电源监视器能够复位处理器、并在VCC上升期间持续保持处理器的复位状态\n• 电池监视器核查剩余电量\n• 100ns的读写存取时间 \n• 没有写次数限制\n• 典型待机电流50µA\n• 可升级32k x 8 SRAM、EEPROM或闪存\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1330Y)或±5% VCC工作范围(DS1330AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• PowerCap模块;

ADI

亚德诺

Package：34-LPM；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256KBIT PARALLEL 34LPM

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亚德诺