DS124资料使用说明书库存现货群晖科技第3页-114ic电子网

首页 >DS124>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
DS1245	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245AB	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245AB-100	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245AB-120	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245AB-70	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245AB-85	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245ABP-100-IND	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245ABP-120-IND	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245ABP-70-IND	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1245ABP-85-IND	文件：221.24 Kbytes Page：12 Pages	1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc 文件：221.24 Kbytes 页数：12 Pages	DALLAS	DALLAS

<<<1 234 5 6 7 8 >>>

技术参数

VSUPPLY(V)：
3.3
Date/ Time Format (hh = sec/100)：
YY-MM-DD/ HH
Features：
PowerCap Package
Memory Type：
NV SRAM
Memory Size(Bytes)：
32K
Time of Day Alarms：
0
Functions：
RTC
RoHS Available：
See Data Sheet
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Oper. Temp.(°C)：
0 to +70
Budgetary Price (See Notes)：
$17.61 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	DS1242	DAL	24+/25+		17	原装正品现货库存价优	询价
深圳市毅创腾电子科技有限公司	DS1245Y-100	DALLAS	23+	DIP32	4500	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市弘为电子有限公司	DS1245AB-100	DALLAS	24+	DIP	11	原装现货假一罚十	询价
深圳市福安瓯科技有限公司	DS1243Y	DALLAS	25+	N/A	3000	强调现货,随时查询!	询价
深圳市荣泽信电子科技有限公司	DS1245W-100		23+		15000	全新原装的现货	询价
深圳市粤科源兴科技有限公司	DS1249Y-85IND	MAXIM	13+	MOD	3758	原装分销	询价
芯有半导体（深圳）有限公司	DS1244Y-150	DS	05+	原厂原装	4285	只做全新原装真实现货供应	询价
千层芯半导体(深圳)有限公司	DS1244Y-70	DALLAS	24+	DIP	2000	全新原装环保现货	询价
深圳市利加科技有限公司	DS1245AB-100	DALLAS	16+	DIP	4	全新原装现货	询价
深圳市欧立现代科技有限公司	DS1249Y-100	DALLAS	24+	DIP	6980	原装现货,可开13%税票	询价

更多DS124供应商更新时间2026-3-19 9:11:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号