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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1230Y-150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-150-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-200	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-200IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-200-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-70	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-70IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-70-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-85	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas

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技术参数

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.5
VSUPPLY (max)(V)：
5.5
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$15.57 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	DS1230Y		25+	DIP-16	18000	原厂直接发货进口原装	询价
深圳市星佑电子有限公司	DS1230Y	DALLAS	05+	DIP	12	自己公司全新库存绝对有货	询价
深圳市荣泽信电子科技有限公司	DS1230Y		23+		12000	全新原装的现货	询价
深圳市一线半导体有限公司	DS1230Y	DALLAS	24+		10		询价
齐创科技(上海,北京,青岛)有限公司	DS1230Y	DALLAS	23+	DIP	5000	原装正品,假一罚十	询价
深圳市佳鑫美电子科技有限公司	DS1230Y	DALLAS	25+		2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市昊创电子有限公司	DS1230Y	DALLAS	1824+	DIP28	2000	原装现货专业代理,可以代拷程序	询价
深圳市赛尔通科技有限公司	DS1230Y	DALLAS	23+	DIP28	65480		询价
深圳市威尔健半导体有限公司	DS1230Y	DALLAS	23+	DIP-28	50000	全新原装正品现货,支持订货	询价
标准国际(香港)有限公司	DS1230Y	Dallas			2	公司优势库存热卖中!!	询价

更多DS1230Y供应商更新时间2025-10-7 16:18:00

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