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型号	下载订购	功能描述	制造商上传企业	LOGO
DS122	文件：2.32735 Mbytes Page：39 Pages	Vero® SE 18 Array Features • Poke-in connectivity • Efficacy of 168 lm/W typical • Lumen output performance ranges from 1,372 to 13,060 lumens • Broad range of CCT options from 1750K to 6500K • CRI options: minimum 65, 70, 80, and 90 • Color control: 2 and 3 SDCM for 2700K-4000K CCT • Reliable operation at u 文件：2.32735 Mbytes 页数：39 Pages	BRIDGELUXBridgelux Inc 普瑞普瑞光电股份有限公司	BRIDGELUX
DS1220	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS
DS1220AB	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS
DS1220AB-100-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	DALLAS	DALLAS
DS1220AB-100-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS
DS1220AB-120-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	DALLAS	DALLAS
DS1220AB-120-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS
DS1220AB-150-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	DALLAS	DALLAS
DS1220AB-150-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS
DS1220AB-200-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	DALLAS	DALLAS

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技术参数

产品系列：
DS
封装外形：
HC-49S
标称频率：
12.288000MHz
负载电容：
18pF
频率稳定度_@25℃：
-30~+30ppm
工作温度范围：
-20~+70℃
温频特性：
-30~+30ppm
尺寸/长x宽：
11.40 x 4.70mm
高度/厚度：
3.60mm
切型：
AT Cut
振动模式：
Fundamental
谐振电阻：
40Ω
静态电容：
5.0pF
存储温度范围：
-40~+85℃
输出波形：
Sine Wave
激励功率：
100μW
引脚数：
2Pins
绝缘电阻_ @ DC100V：
500 MΩ
年老化率_ppm/10Years：
-5.0~+5.0ppm/year
封装技术：
Resistance Weld
包装类型：
Bag Packing
载带标准：
N/Amm
载盘尺寸：
N/A
最小包装数：
200Pcs
安装方式：
Through Hole
主要材质：
Quartz Crystal
品牌国别：
China
原始制造商：
Failong Crystal Technology Co.
印字类型：
Laser
净重：
0.4g
美国海关关税编码：
8541600030
欧洲进口关税编码：
8541600000
别名：
--

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	DS1221S	DALLAS	24+	SMD	67	现货	询价
深圳市能创芯电子科技有限公司	DS1220Y-200	DALLAS	23+	DIP24	3000	原装正品假一罚百!可开增票!	询价
深圳市力仕科电子科技有限公司	DS1225Y-150+	Maxim/美信	25	EDIP-28	6000	原装正品	询价
深圳市宏捷佳电子科技有限公司	DS1225Y-150	DALLAS	20+	DIP28L	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市宇集芯电子有限公司	DS1225Y-100IND	DALLAS	26+	DIP-28	90000	一级代理商进口原装现货、价格合理	询价
深圳市天地昆电子有限公司	DS1220AB-150	DALLAS	9911+	DIP-24	1	上传都是百分之百进口原装现货	询价
深圳市卓越微芯电子有限公司	DS1225AD-85	DallasLogicCorporation	25+		5680	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳杰伟业科技有限公司	DS1220Y-120	DALLAS	2402+	DIP	3668	优势代理渠道,原装现货,可全系列订货	询价
深圳市芯皇电子有限公司	DS1225Y-150	DALLAS	26+	23+	6000	原装现货有上库存就有货全网最低假一赔万	询价
深圳市芯为科技有限公司	DS1225AD-85+	MAX	N/A	绝对原装进口现货,假一赔十,价	8960		询价

更多DS122供应商更新时间2026-10-24 16:00:00

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