DS1220说明书PDF资料库存现货亚德诺Dallas-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1220	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	Dallas	Dallas
DS1220	文件：509.1 Kbytes Page：5 Pages	Platon Metal Tube VA Gas or Liquid 文件：509.1 Kbytes 页数：5 Pages	TTELEC	TTELEC
DS1220	文件：300 bytes Page：1 Pages	16k Nonvolatile SRAM DESCRIPTION\nThe DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs\norganized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and\ncontrol circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a 10 years minimum data retention in the absence of external power\nData is automatically protected during power loss\nDirectly replaces 2k x 8 volatile static RAM or EEPROM\nUnlimited write cycles\nLow-power CMOS\nJEDEC standard 24-pin DIP package\nRead and write access times as fast as 100 ns\nLithi;	ADI 亚德诺	ADI
DS1220AB	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	Dallas	Dallas
DS1220AB-100-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220AB-100-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	Dallas	Dallas
DS1220AB-120-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220AB-120-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	Dallas	Dallas
DS1220AB-150-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220AB-150-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 页数：9 Pages	Dallas	Dallas

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技术参数

产品系列：
DS
封装外形：
HC-49S
标称频率：
12.288000MHz
负载电容：
18pF
频率稳定度_@25℃：
-30~+30ppm
工作温度范围：
-20~+70℃
温频特性：
-30~+30ppm
尺寸/长x宽：
11.40 x 4.70mm
高度/厚度：
3.60mm
切型：
AT Cut
振动模式：
Fundamental
谐振电阻：
40Ω
静态电容：
5.0pF
存储温度范围：
-40~+85℃
输出波形：
Sine Wave
激励功率：
100μW
引脚数：
2Pins
绝缘电阻_ @ DC100V：
500 MΩ
年老化率_ppm/10Years：
-5.0~+5.0ppm/year
封装技术：
Resistance Weld
包装类型：
Bag Packing
载带标准：
N/Amm
载盘尺寸：
N/A
最小包装数：
200Pcs
安装方式：
Through Hole
主要材质：
Quartz Crystal
品牌国别：
China
原始制造商：
Failong Crystal Technology Co.
印字类型：
Laser
净重：
0.4g
美国海关关税编码：
8541600030
欧洲进口关税编码：
8541600000
别名：
--

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	DS1220		24+		5000		询价
深圳市星佑电子有限公司	DS1220	DS	05+	原厂原装	4285	只做全新原装真实现货供应	询价
深圳市富诚威科技有限公司	DS1220	DS	25+	模块	2645	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市赛尔通科技有限公司	DS1220	DS	23+		65480		询价
深圳市亿智腾科技有限公司	DS1220		24+	DIP	6430	原装现货/欢迎来电咨询	询价
深圳市恒达亿科技有限公司	DS1220	DS	25+	DIP	3200	全新原装、诚信经营、公司现货销售	询价
深圳市安富世纪电子有限公司	DS1220	DALLAS	23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价
深圳市昌和盛利电子有限公司	DS1220	DS	NEW	模块	3562	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市粤科源兴科技有限公司	DS1220AD-200IND+	MAXIM	13+	MOD	3758	原装分销	询价
深圳市益百分电子有限公司	DS1220Y-200	DALLAS	DIP	95+	2	全新原装进口自己库存优势	询价

更多DS1220供应商更新时间2025-10-12 14:30:00

技术参数

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