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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1220Y	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220Y-100	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220Y-120	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220Y-150	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1220Y-200	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 页数：8 Pages	Dallas	Dallas
DS1221	文件：134.18 Kbytes Page：8 Pages	Nonvolatile Controller x 4 Chip DESCRIPTION The DS1221 Nonvolatile Controller x 4 Chip is a CMOS circuit which solves the application problem of converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of tolerance condition. When such a condition is detected, the chip enable outputs are inhibite 文件：134.18 Kbytes 页数：8 Pages	Dallas	Dallas
DS1222	文件：46.6 Kbytes Page：4 Pages	BankSwitch Chip DESCRIPTION The DS1222 BankSwitch Chip is a CMOS circuit designed to select one of 16 memory banks under software control. Memory bank switching allows for an increase in memory capacity without additional address lines. Continuous blocks of memory are enabled by selecting proper memory bank thro 文件：46.6 Kbytes 页数：4 Pages	Dallas	Dallas
DS1225	文件：80.83 Kbytes Page：8 Pages	64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu 文件：80.83 Kbytes 页数：8 Pages	Dallas	Dallas
DS1225Y	文件：80.83 Kbytes Page：8 Pages	64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu 文件：80.83 Kbytes 页数：8 Pages	Dallas	Dallas
DS1225Y-150	文件：80.83 Kbytes Page：8 Pages	64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu 文件：80.83 Kbytes 页数：8 Pages	Dallas	Dallas

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产品属性

产品编号：
DS1220AD-100
制造商：
Analog Devices Inc./Maxim Integrated
类别：
集成电路（IC） > 存储器
包装：
管件
存储器类型：
非易失
存储器格式：
NVSRAM
技术：
NVSRAM（非易失性 SRAM）
存储容量：
16Kb（2K x 8）
存储器接口：
并联
写周期时间 - 字，页：
100ns
电压 - 供电：
4.5V ~ 5.5V
工作温度：
0°C ~ 70°C（TA）
安装类型：
通孔
封装/外壳：
24-DIP 模块（0.600"，15.24mm）
供应商器件封装：
24-EDIP
描述：
IC NVSRAM 16KBIT PARALLEL 24EDIP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	DS1220AD-100	DALLAS	05+	PSDIP	16	自己公司全新库存绝对有货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	DS1220AD-100	DALLAS	25+	11+新到货	18000	原厂直接发货进口原装	询价
深圳市振宏微科技有限公司	DS1220AD-100	MAXIM	23+	MOD	8888	专做原装正品,假一罚百!	询价
深圳市赛尔通科技有限公司	DS1220AD-100	DALLAS	23+	MOD	65480		询价
瀚佳科技(深圳)有限公司	DS1220AD-100	Maxim Integrated	24+	24-EDIP	56200	一级代理/放心采购	询价
深圳市科雨电子有限公司	DS1220AD-100	MAXIM	25+	DIP-24	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市旺财半导体有限公司	DS1220AD-100	DALLAS	23+	SOP/DIP	9465	正品原装货价格低	询价
上海凌岳电子科技有限公司（上海涵恩科技）	DS1220AD-100	DALLAS	2023+		3000	进口原装现货	询价
深圳市安富世纪电子有限公司	DS1220AD-100	Maxim Integrated	23+	24-EDIP	7300	专注配单,只做原装进口现货	询价
深圳市外芯人半导体有限公司	DS1220AD-100	DALLAS SEMICONDUCTOR	24+	DIP-24	20000	原装进口正品	询价

更多DS122供应商更新时间2025-12-18 16:06:00

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