16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

文件：144.55 Kbytes 页数：8 Pages

Dallas

16K Nonvolatile SRAM

文件：258.54 Kbytes 页数：7 Pages

ARTSCHIP

16k Nonvolatile SRAM

文件：207.33 Kbytes 页数：9 Pages

Maxim

美信

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

文件：144.55 Kbytes 页数：8 Pages

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

文件：144.55 Kbytes 页数：8 Pages

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

文件：144.55 Kbytes 页数：8 Pages

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

文件：144.55 Kbytes 页数：8 Pages

Dallas

16k Nonvolatile SRAM

文件：207.33 Kbytes 页数：9 Pages

Maxim

美信

16k Nonvolatile SRAM

文件：207.33 Kbytes 页数：9 Pages

Maxim

美信

16K非易失SRAM

DS1220Y 16k非易失SRAM为16,384位、全静态非易失RAM，按照8位、2048字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。NV SRAM器件可以直接用来替代现有的2k x 8 SRAM，符合通用的单字节宽、24引脚DIP标准。DS1220Y还与2716 EPROM或2816 EEPROM的引脚排列匹配，可直接替换并增强其性能。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 \n• 在没有外部电源的情况下最少可以保存数据10年 \n• 掉电期间数据被自动保护 \n• 直接替代2k x 8易失静态RAM或EEPROM \n• 没有写次数限制 \n• 低功耗CMOS操作 \n• JEDEC标准的24引脚DIP封装 \n• 100ns的读写存取时间 \n• ±10%工作范围 \n• 可选的-40°C至+85°C工业级温度范围，指定为IND;

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