丝印：DS120015H3；Package：TO-247-2L；3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.18174 Mbytes 页数：9 Pages

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丝印：DS120015H5；Package：TO-247-2L；5th Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：593.91 Kbytes 页数：9 Pages

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丝印：DS120020G3；Package：TO-247-3L；3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.25686 Mbytes 页数：9 Pages

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丝印：DS120020H3；Package：TO-247-2L；3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant

文件：1.0663 Mbytes 页数：9 Pages

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三安光电

丝印：DS120020H5；Package：TO-247-2L；5th Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：641.37 Kbytes 页数：9 Pages

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丝印：DS120030G3；Package：TO-247-3L；3rd Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19612 Mbytes 页数：9 Pages

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丝印：DS120030H3；Package：TO-247-2L；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.13833 Mbytes 页数：9 Pages

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丝印：DS120040G3；Package：TO-247-3L；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19742 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120040H3；Package：TO-247-2L；3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.23794 Mbytes 页数：9 Pages

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丝印：DS120040H5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：599.39 Kbytes 页数：9 Pages

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