丝印：DS120005D3；Package：TO-252-2L；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp

文件：1.14236 Mbytes 页数：9 Pages

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丝印：DS120020C3；Package：TO-220-2L；3 rd Generation 1200V /20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

文件：1.19097 Mbytes 页数：9 Pages

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丝印：DS120020H3；Package：TO-247-2L；3 rd Generation 1200V/20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

文件：1.19289 Mbytes 页数：9 Pages

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丝印：DS120002C3；Package：TO-220-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.12079 Mbytes 页数：9 Pages

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丝印：DS120002D3；Package：TO-252-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.07903 Mbytes 页数：9 Pages

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丝印：DS120003D3；Package：TO-252-2L；3rd Generation 1200V/3A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.17677 Mbytes 页数：9 Pages

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丝印：DS120005C3；Package：TO-220-2L；3 rd Generation 1200V 5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.18145 Mbytes 页数：9 Pages

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丝印：DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.1397 Mbytes 页数：9 Pages

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丝印：DS120010C3；Package：TO-220-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.23812 Mbytes 页数：9 Pages

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丝印：DS120010C5；Package：TO-220-2L；5th Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：590.04 Kbytes 页数：9 Pages

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