DS125BR401ANJYR资料datasheet下载原装现货第53页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
ADS120J005D3	文件：1.14236 Mbytes Page：9 Pages	丝印：DS120005D3；Package：TO-252-2L；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件：1.14236 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
ADS120J020C3	文件：1.19097 Mbytes Page：9 Pages	丝印：DS120020C3；Package：TO-220-2L；3 rd Generation 1200V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件：1.19097 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
ADS120J020H3	文件：1.19289 Mbytes Page：9 Pages	丝印：DS120020H3；Package：TO-247-2L；3 rd Generation 1200V/20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件：1.19289 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J002C3	文件：1.12079 Mbytes Page：9 Pages	丝印：DS120002C3；Package：TO-220-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.12079 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J002D3	文件：1.07903 Mbytes Page：9 Pages	丝印：DS120002D3；Package：TO-252-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.07903 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J003D3	文件：1.17677 Mbytes Page：9 Pages	丝印：DS120003D3；Package：TO-252-2L；3rd Generation 1200V/3A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.17677 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J005C3	文件：1.18145 Mbytes Page：9 Pages	丝印：DS120005C3；Package：TO-220-2L；3 rd Generation 1200V 5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.18145 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J005D3	文件：1.1397 Mbytes Page：9 Pages	丝印：DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.1397 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J010C3	文件：1.23812 Mbytes Page：9 Pages	丝印：DS120010C3；Package：TO-220-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.23812 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
SDS120J010C5	文件：590.04 Kbytes Page：9 Pages	丝印：DS120010C5；Package：TO-220-2L；5th Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：590.04 Kbytes 页数：9 Pages	SANAN 三安光电	SANAN

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产品属性

产品编号：
DS125BR401ANJYR
制造商：
Texas Instruments
类别：
集成电路（IC） > 信号缓冲器、中继器、分离器
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
类型：
缓冲器，转接驱动器
应用：
PCIe，SAS，SATA
输入：
CML
输出：
CML
数据速率（最大值）：
12Gbps
通道数：
4
延迟时间：
80ps
信号调节：
输入均衡，输出去加重
电压 - 供电：
2.375V ~ 3.6V
工作温度：
-40°C ~ 85°C
安装类型：
表面贴装型
封装/外壳：
54-WFQFN 裸露焊盘
供应商器件封装：
54-WQFN（10x5.5）
描述：
IC REDRIVER PCIE/SAS/SATA 54WQFN

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	DS125BR401ANJYR	TI/德州仪器	25+	WQFN54	32360	TI/德州仪器全新特价DS125BR401ANJYR即刻询购立享优惠#长期有货	询价
深圳市高捷芯城科技有限公司	DS125BR401ANJYR	TI(德州仪器)	24+	QFN-54-EP(5	9203	支持大陆交货,美金交易。原装现货库存。	询价
深圳市卓越微芯电子有限公司	DS125BR401ANJYR	TI/NS	25+	QFN54	25	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市恒创达实业有限公司	DS125BR401ANJYR	TI/NS	17+	QFN54	6200	100%原装正品现货	询价
深圳市华斯顿科技有限公司	DS125BR401ANJYR	TI	25+23+	QFN	25660	绝对原装正品全新进口深圳现货	询价
深圳市纳立科技有限公司	DS125BR401ANJYR	TI	三年内		1983	只做原装正品	询价
君宇国际实业有限公司	DS125BR401ANJYR	TI	16+	WQFN	10000	原装正品	询价
瀚佳科技(深圳)有限公司	DS125BR401ANJYR	Texas Instruments	24+	54-WQFN(10x5.5)	56300	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	DS125BR401ANJYR	TI/德州仪器	2447	WQFN54	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	DS125BR401ANJYR	TI	25+	QFN-54	932	就找我吧!--邀您体验愉快问购元件!	询价

更多DS12供应商更新时间2025-12-18 18:26:00

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