丝印：DS120030G3；Package：TO-247-3L；3rd Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19612 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120030H3；Package：TO-247-2L；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.13833 Mbytes 页数：9 Pages

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三安光电

丝印：DS120040G3；Package：TO-247-3L；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19742 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120040H3；Package：TO-247-2L；3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.23794 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120040H5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：599.39 Kbytes 页数：9 Pages

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丝印：DS120040J5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：591.48 Kbytes 页数：9 Pages

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丝印：DS120050H3；Package：TO-247-2L；3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.22875 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120060G3；Package：TO-247-3L；3rd Generation 1200V/60A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.15153 Mbytes 页数：9 Pages

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三安光电

串行RAM芯片

DS1200串行RAM芯片是一个微型读/写存储器，能够随机存取单个8位数据串(字节)或连续存取1024位数据块(突发模式)。片内电路降低了与微处理器的接口成本，仅需CLK、/RST及DQ三个信号便可实现数据传输。\n 在电池输入端VBAT接入一个2V至4V的电池便可获得非易失性。对于要求一定数据保持时间的应用可以按照0.5µA负载确定外部电池的容量。如果不要求非易失性，VBAT引脚应接地。 \n• 1024位读/写存储器 \n• 对于备用电池应用提供极低的数据保持电流 \n• 每秒四百万比特的数据率 \n• 具有单字节或多字节数据传输能力 \n• 没有写次数限制 \n• 低功耗CMOS电路;

ADI

亚德诺

1200 Watt Front End AC-DC Power Supplies

The DS1200 series is Artesyn Embedded Technologies' highest power, highest density bulk front end AC-DC power supply in the industry standard 1U x 2U form factor. It accepts a wide range 90–264 Vac input and provides a main 12 V output plus a 3.3 V or optional 5.5 V standby output. Rated at 1,100 wa ·Active Power Factor Correction\n·EN61000-3-2 harmonic compliance\n·Active AC Inrush Control\n·Standard 1U x 2U form factor\n·High Density 21.71 Watts/cu-in\n·+12 Vdc Output\n·+3.3 or 5.0 Vdc stand-by\n·No Minimum load required\n·Hot-plug operation\n·N+1 Redundant\n·Internal OR'ing FET's\n·Active cu;

Artesyn

雅特生