丝印：DS065016G3；Package：TO-247-3L；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode

Features  AEC Q 101 qualified  Revolutionary semiconductor material Silicon Carbide (SiC)  N o reverse recovery  High speed switching performance  Temperature independent s witching behavior  System cost / size savings due to reduced cooling requirements  J unction temperature range

文件：1.17064 Mbytes 页数：9 Pages

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丝印：DS065020C3；Package：TO-220-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp

文件：1.15573 Mbytes 页数：9 Pages

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丝印：DS065020E3；Package：TO-263-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp

文件：1.08429 Mbytes 页数：9 Pages

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丝印：DS065020G3；Package：TO-247-3L；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

文件：1.03273 Mbytes 页数：9 Pages

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丝印：DS065020H3；Package：TO-247-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp

文件：1.14778 Mbytes 页数：9 Pages

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丝印：DS065040G3；Package：TO-247-3L；3 rd Generation 65 0V/ 4 0 A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent s witching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

文件：1.16661 Mbytes 页数：9 Pages

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丝印：DS065002D3；Package：TO-252-2L；3 rd Generation 650 V/2A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.07542 Mbytes 页数：9 Pages

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丝印：DS065004C3；Package：TO-220-2L；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.12913 Mbytes 页数：9 Pages

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丝印：DS065004C4；Package：TO-220-2L；4 th Generation 650V/ 4 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed s witching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.03745 Mbytes 页数：9 Pages

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丝印：DS065004D3；Package：TO-252-2L；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.08732 Mbytes 页数：9 Pages

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