丝印：DS065004D4；Package：TO-252-2L；4 th Generation 650 V/ 4 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.08022 Mbytes 页数：9 Pages

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丝印：DS065006C3；Package：TO-220-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.09746 Mbytes 页数：9 Pages

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丝印：DS065006D3；Package：TO-252-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.11029 Mbytes 页数：9 Pages

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丝印：DS065006E3；Package：TO-263-2L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse re covery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.02601 Mbytes 页数：9 Pages

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丝印：DS065006S3；Package：DFN884L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide ( N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.01541 Mbytes 页数：9 Pages

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丝印：DS065008C3；Package：TO-220-2L；3 rd Generation 650 V/ 8A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.15131 Mbytes 页数：9 Pages

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丝印：DS065008D3；Package：TO-252-2L；650V/8A SiC Schottky Barrier Diode

Zero Reverse Recovery Current Positive temperature coefficient Temperature independent performance High speed switching Low switching loss Low hea t dissipation req uirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive traction ➢ Charging pile

文件：413.28 Kbytes 页数：4 Pages

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丝印：DS065008D4；Package：TO-252-2L；4 th Generation 650 V/ 8 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.09546 Mbytes 页数：9 Pages

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丝印：DS065008N3；Package：TO-220N-2L；650V/8A SiC Schottky Barrier Diode

Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switc hing loss Low heat dissipation requirements

文件：936.72 Kbytes 页数：4 Pages

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丝印：DS065008S3；Package：DFN；3 rd Generation 65 0V/ 8A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.06561 Mbytes 页数：9 Pages

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