丝印：DS065010C3；Package：TO-220-2L；3 rd Generation 650 V/ 10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.14206 Mbytes 页数：9 Pages

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丝印：DS065010D3；Package：TO-252-2L；3 rd Generation 650 V/ 1 0 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.15404 Mbytes 页数：9 Pages

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丝印：DS065010E3；Package：TO-263-2L；3 rd Generation 65 0V/ 10 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.07091 Mbytes 页数：9 Pages

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丝印：DS065010N3；Package：TO-220N-2L；650V/10A SiC Schottky Barrier Diode

Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switch ing loss Low heat dissipation requirements

文件：924.39 Kbytes 页数：4 Pages

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丝印：DS065010S3；Package：DFN；3 rd Generation 65 0V/ 10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.05596 Mbytes 页数：9 Pages

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丝印：DS065012C3；Package：TO-220-2L；3 rd Generation 650 V/ 12A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.13794 Mbytes 页数：9 Pages

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丝印：DS065012S3；Package：DFN8X84L；3rd Generation 65 0V/ 12A SiC Schottky Barrier Diode

Revolutionary semiconductor material Si licon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：995.95 Kbytes 页数：9 Pages

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丝印：DS065016C3；Package：TO-220-2L；3 rd Generation 650 V/ 16A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.13687 Mbytes 页数：9 Pages

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丝印：DS065016G3；Package：TO-247-3L；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements unction temperature range from 55 to 175 RoHS compliant

文件：1.16322 Mbytes 页数：9 Pages

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丝印：DS065016H3；Package：TO-247-2L；3 rd Generation 650 V/ 16 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

文件：1.13472 Mbytes 页数：9 Pages

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