| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：DS065020G3；Package：TO-247-3L；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode AECQ101qualified RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScom | SANANSanan Optoelectronics Co., Ltd 三安光电三安光电股份有限公司 | SANAN | ||
Marking：DS065020G3；Package：TO-247-3L；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant | SANANSanan Optoelectronics Co., Ltd 三安光电三安光电股份有限公司 | SANAN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
