ADS065J016G3中文资料下载市场行情三安光电-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADS065J016G3	文件：1.17064 Mbytes Page：9 Pages	丝印：DS065016G3；Package：TO-247-3L；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Features  AEC Q 101 qualified  Revolutionary semiconductor material Silicon Carbide (SiC)  N o reverse recovery  High speed switching performance  Temperature independent s witching behavior  System cost / size savings due to reduced cooling requirements  J unction temperature range 文件：1.17064 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
ADS065J016G3	文件：300 bytes Page：1 Pages	碳化硅二极管	HunanSanan 湖南三安	HunanSanan
SDS065J016G3	文件：1.16322 Mbytes Page：9 Pages	3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements unction temperature range from 55 to 175 RoHS compliant 文件：1.16322 Mbytes 页数：9 Pages	SANAN 三安光电	SANAN
ADS1000A0IDBVR	文件：0 bytes Page：0 Pages	NA	Texas Instruments 上传：上海皇华信息科技有限公司	Texas Instruments
ADS1000A1IDBVR	文件：0 bytes Page：0 Pages	NA	Texas Instruments 上传：上海皇华信息科技有限公司	Texas Instruments

更多ADS065J016G3供应商更新时间2026-2-2 16:25:00