DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

Radiation-tolerant, 100-V max simple 3-phase gate driver with bootstrap diodes

DRV8351-SEP is a three phase half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8351-SEPD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate driv 40V Three Phase Half-Bridge Gate driver \n \nDrives N-Channel MOSFETs (NMOS)\n \nGate Driver Supply (GVDD): 5-15V\n \nMOSFET supply (SHx) supports up to 40V\n \n\n \nTarget Radiation Performance \n \nSEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg\n \nSET and SEFI characterized up to LET = 43 Me;

TI

德州仪器