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DRV8351-SEP数据手册TI中文资料规格书
DRV8351-SEP规格书详情
描述 Description
DRV8351-SEP is a three phase half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8351-SEPD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.
The phase pins SHx are able to tolerate significant negative voltage transients; while high side gate driver supply BSTx and GHx can support higher positive voltage transients (57.5V) abs max voltage which improve the robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high sides through GVDD and BST undervoltage lockout.
特性 Features
40V Three Phase Half-Bridge Gate driver
Drives N-Channel MOSFETs (NMOS)
Gate Driver Supply (GVDD): 5-15V
MOSFET supply (SHx) supports up to 40V
Target Radiation Performance
SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg
SET and SEFI characterized up to LET = 43 MeV-cm2 /mg
TID assured for every wafer lot up to 30 krad(Si)
TID characterized up to 30 krad(Si)
Space-enhanced plastic (space EP):
Controlled Baseline
One Assembly/Test Site
One Fabrication site
Extended Product Life Cycle
Product Traceability
Integrated Bootstrap Diodes
Supports Inverting and Non-Inverting INLx inputs
Bootstrap gate drive architecture
750mA source current
1.5- sink current
Low leakage current on SHx pins (<55µA)
Absolute maximum BSTx voltage up to 57.5V
Supports negative transients up to -22V on SHx
Built-in cross conduction prevention
Fixed deadtime insertion of 200nS
Supports 3.3V and 5V logic inputs with 20V Abs max
4nS typical propagation delay matching
Compact TSSOP package
Efficient system design with Power Blocks
Integrated protection features
BST undervoltage lockout (BSTUV)
GVDD undervoltage (GVDDUV)
技术参数
- 制造商编号
:DRV8351-SEP
- 生产厂家
:TI
- Architecture
:Gate driver
- Vs ABS (max) (V)
:100
- Operating temperature range (°C)
:-55 to 125
- 封装
:TSSOP (PW)
- 引脚
:20
- 尺寸
:41.6 mm² 6.5 x 6.4
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
TI(德州仪器) |
2024+ |
QFN-40-EP(6x6) |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
TI |
23+ |
N/A |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
TI(德州仪器) |
2511 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
询价 | ||
TI(德州仪器) |
25+ |
N/A |
6000 |
原装,请咨询 |
询价 | ||
TI |
23+ |
N/A |
560 |
原厂原装 |
询价 |