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DRV8351-SEP数据手册TI中文资料规格书

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厂商型号

DRV8351-SEP

功能描述

Radiation-tolerant, 100-V max simple 3-phase gate driver with bootstrap diodes

制造商

TI Texas Instruments

中文名称

德州仪器 美国德州仪器公司

数据手册

下载地址下载地址二

更新时间

2025-8-11 20:00:00

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DRV8351-SEP规格书详情

描述 Description

DRV8351-SEP is a three phase half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8351-SEPD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx are able to tolerate significant negative voltage transients; while high side gate driver supply BSTx and GHx can support higher positive voltage transients (57.5V) abs max voltage which improve the robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high sides through GVDD and BST undervoltage lockout.

特性 Features

40V Three Phase Half-Bridge Gate driver

Drives N-Channel MOSFETs (NMOS)

Gate Driver Supply (GVDD): 5-15V

MOSFET supply (SHx) supports up to 40V



Target Radiation Performance

SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg

SET and SEFI characterized up to LET = 43 MeV-cm2 /mg

TID assured for every wafer lot up to 30 krad(Si)

TID characterized up to 30 krad(Si)



Space-enhanced plastic (space EP):

Controlled Baseline

One Assembly/Test Site

One Fabrication site

Extended Product Life Cycle

Product Traceability



Integrated Bootstrap Diodes

Supports Inverting and Non-Inverting INLx inputs

Bootstrap gate drive architecture

750mA source current

1.5- sink current



Low leakage current on SHx pins (<55µA)

Absolute maximum BSTx voltage up to 57.5V

Supports negative transients up to -22V on SHx

Built-in cross conduction prevention

Fixed deadtime insertion of 200nS

Supports 3.3V and 5V logic inputs with 20V Abs max

4nS typical propagation delay matching

Compact TSSOP package

Efficient system design with Power Blocks

Integrated protection features

BST undervoltage lockout (BSTUV)

GVDD undervoltage (GVDDUV)

技术参数

  • 制造商编号

    :DRV8351-SEP

  • 生产厂家

    :TI

  • Architecture

    :Gate driver

  • Vs ABS (max) (V)

    :100

  • Operating temperature range (°C)

    :-55 to 125

  • 封装

    :TSSOP (PW)

  • 引脚

    :20

  • 尺寸

    :41.6 mm² 6.5 x 6.4

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
询价
TI(德州仪器)
2024+
QFN-40-EP(6x6)
500000
诚信服务,绝对原装原盘
询价
TI
23+
N/A
8000
专注配单,只做原装进口现货
询价
TI(德州仪器)
2511
8484
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
TI(德州仪器)
2450+
SMD
9850
只做原装正品代理渠道!假一赔三!
询价
TI(德州仪器)
25+
N/A
6000
原装,请咨询
询价
TI
23+
N/A
560
原厂原装
询价