DRV8329数据手册TI中文资料规格书

特性 Features

• 65-V Three Phase Half-Bridge Gate Driver
• Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
• 4.5 to 60-V Operating Voltage Range
• Supports 100% PWM Duty Cycle with Trickle Charge pump

• Bootstrap based Gate Driver Architecture
• 1000-mA Maximum Peak Source Current
• 2000-mA Maximum Peak Sink Current

• Integrated Current Sense Amplifier with low input offset (optimized for 1 shunt)
• Adjustable Gain (5, 10, 20, 40 V/V)

• Hardware interface provides simple configuration
• Ultra-low power sleep mode Power Blocks
• Integrated Protection Features
• PVDD Undervoltage Lockout (PVDDUV)
• GVDD Undervoltage (GVDDUV)
• Bootstrap Undervoltage (BST_UV)
• Overcurrent Protection (VDS_OCP, SEN_OCP)
• Thermal Shutdown (OTSD)
• Fault Condition Indicator (nFAULT)