DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.13693 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.2972 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 页数：58 Pages

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器

丝印：DRV8329B；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

60-V 1000/2000 mA 3-phase gate driver with single current sense amplifier

• 65-V Three Phase Half-Bridge Gate Driver \n• 4.5 to 60-V Operating Voltage Range\n• Bootstrap based Gate Driver Architecture \n• 2000-mA Maximum Peak Sink Current\n• Integrated Current Sense Amplifier with low input offset (optimized for 1 shunt) \n• Hardware interface provides simple configuratio;

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器