DRV8334数据手册TI中文资料规格书

描述 Description

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.

The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

特性 Features

• Three phase half-bridge gate driver
• Drives six N-channel MOSFETs (NMOS)
• 4.5 to 60-V wide operating voltage range
• Bootstrap architecture for high-side gate driver
• Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
• Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit

• Smart Gate Drive architecture
• 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
• Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtime
• Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
• Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown

• Low-side Current Sense Amplifier
• Sub-1 mV low input offset across temperature
• 9-level adjustable gain

• SPI-based detailed configuration and diagnostics
• DRVOFF pin to disable driver independently
• High voltage wake up pin (nSLEEP)
• 6x, 3x, 1x, and Independent PWM Modes
• Supports 3.3-V, and 5-V Logic Inputs
• Integrated protection features
• Battery and power supply voltage monitors
• Phase feedback comparator
• MOSFET VDS and Rsense over current monitors
• MOSFET VGS gate fault monitors
• Device thermal warning and shutdown
• Fault condition indicator pin