DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器

丝印：DRV8334；Package：HTQFP；DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器

具有精确电流检测功能的 60V、1000mA 至 2000mA 三相栅极驱动器

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and • Three phase half-bridge gate driver \n• Drives six N-channel MOSFETs (NMOS)\n• 4.5 to 60-V wide operating voltage range\n• Bootstrap architecture for high-side gate driver\n• Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz\n• Tric;

TI

德州仪器

具有精确电流检测功能的汽车级 12V 和 24V 电池三相栅极驱动器单元

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an in AEC-Q100 qualified for automotive applications. Temperature options: \n \nDRV8334EPHP: –40°C to +150°C, TA\n \nDRV8334QPHP: –40°C to +125°C,TA\n \n\n \nThree phase half-bridge gate driver \n \nDrives six N-channel MOSFETs (NMOS)\n \n4.5 to 60V wide operating voltage range\n \nBootstrap architecture ;

TI

德州仪器