丝印：DRV8334；Package：HTQFP；DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器

DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at

文件：3.44984 Mbytes 页数：89 Pages

TI

德州仪器

DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at

文件：3.44984 Mbytes 页数：89 Pages

TI

德州仪器

DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at

文件：3.44984 Mbytes 页数：89 Pages

TI

德州仪器

IGBT Drive Optocoupler

文件：965.27 Kbytes 页数：35 Pages

ONSEMI

安森美半导体

IGBT Drive Optocoupler

文件：965.27 Kbytes 页数：35 Pages

ONSEMI

安森美半导体