丝印：DRV8334；Package：HTQFP；DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器

丝印：DRV8334；Package：HTQFP；DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器

DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60-V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs a

文件：2.18072 Mbytes 页数：77 Pages

TI

德州仪器