| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN；DRV8353M 100-V Three-Phase Smart Gate Driver 文件：3.15245 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent 文件：3.18085 Mbytes 页数：76 Pages | TI 德州仪器 | TI | ||
丝印：DRV8353HM；Package：WQFN；DRV8353M 100-V Three-Phase Smart Gate Driver 文件：3.15245 Mbytes 页数：76 Pages | TI 德州仪器 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2022+原装正品 |
WQFN-40 |
18000 |
支持工厂BOM表配单 公司只做原装正品货 |
询价 | ||
TI(德州仪器) |
24+ |
QFN-40-EP(6x6) |
1083 |
深耕行业12年,可提供技术支持。 |
询价 | ||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TI(德州仪器) |
2021+ |
WQFN-40 |
499 |
询价 | |||
TI |
23+ |
N/A |
560 |
原厂原装 |
询价 | ||
TI |
25+ |
WQFN (RTA) |
6000 |
原厂原装,价格优势 |
询价 | ||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
TI(德州仪器) |
23+ |
WQFN-40 |
13650 |
公司只做原装正品,假一赔十 |
询价 | ||
Texas Instruments |
25+ |
40-WFQFN 裸露焊盘 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
TI(德州仪器) |
25+ |
WQFN-40-EP(6x6) |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 |
相关芯片丝印
更多- DRV8353RHRGZR
- DRV8353RHRGZR
- DRV8353RHRGZR
- DRV8353RHRGZT
- DRV8353RSRGZR
- DRV8353RSRGZR
- DRV8353RSRGZR
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- DRV8353SRTAR
- DRV8353SRTAR
- DRV8353SRTAR
- DRV8353SRTAT
- DRV8353SMRTAT
- DRV8353SMRTAT.A
- DRV8353SMRTATG4.A
- DRV8376HNLGR
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- DRV8412DDWR.A
- DRV8412DDWRG4.A
- DRV8412DDWR
- DRV8421BDFUR
- DRV8434ARGER
- DRV8434PRGER
- DRV8461DDWR
- DRV8704DCPR.A
- DRV8704DCP
- DRV8704DCPR.A
- DRV8704DCPRG4.A
- DRV8705HQRHBRQ1
- DRV8705SQRHBRQ1
- DRV8706HQRHBRQ1
- DRV8706SQRHBRQ1
- DRV8711DCPRG4.A
- DRV8711DCP
- DRV8711DCPR.A
- DRV8714HQRHARQ1
- DRV8714SQRHARQ1
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- DRV8718SQRVJRQ1
- DRV8800PWP
- DRV8800PWPR.A
- DRV8800PWPRG4
- DRV8800PWPRG4.B
- DRV8800RTYR.A
相关库存
更多- DRV8353RHRGZT
- DRV8353RHRGZT
- DRV8353RHRGZR.A
- DRV8353RHRGZT.A
- DRV8353RSRGZT
- DRV8353RSRGZT
- DRV8353RSRGZR.A
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- DRV8353SRTAT
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- DRV8353SRTAR.A
- DRV8353SRTAT.A
- DRV8353SMRTAT
- DRV8353SMRTATG4
- DRV8363RGZR
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- DRV8412DDW
- DRV8412DDWRG4
- DRV8412DDWRG4.B
- DRV8421ADFUR
- DRV8434RGER
- DRV8434ERGER
- DRV8434SRGER
- DRV8704DCPR
- DRV8704DCPRG4.A
- DRV8704DCPR
- DRV8704DCPRG4
- DRV8704DCP
- DRV8705HQRHBTQ1
- DRV8705SQRHBTQ1
- DRV8706HQRHBTQ1
- DRV8706SQRHBTQ1
- DRV8711DCPRG4
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- DRV8714HQRHARQ1
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- DRV8714SQRVJRQ1
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- DRV8800PWPR
- DRV8800PWPR.B
- DRV8800PWPRG4.A
- DRV8800RTYR
- DRV8800RTYR.B
