DRV8353HMRTAT.A中文资料德州仪器数据手册PDF规格书

1 Features

• 9 to 100-V, Triple half-bridge gate driver

– Extended TA operation -55 °C to 125 °C

– Optional triple low-side current shunt amplifiers

• Smart gate drive architecture

– Adjustable slew rate control for EMI

performance

– VGS handshake and minimum dead-time

insertion to prevent shoot-through

– 50-mA to 1-A peak source current

– 100-mA to 2-A peak sink current

– dV/dt mitigation through strong pulldown

• Integrated gate driver power supplies

– High-side doubler charge pump For 100%

PWM duty cycle control

– Low-side linear regulator

• Integrated triple current shunt amplifiers

– Adjustable gain (5, 10, 20, 40 V/V)

– Bidirectional or unidirectional support

• 6x, 3x, 1x, and independent PWM modes

– Supports 120° sensored operation

• SPI or hardware interface available

• Low-power sleep mode (20 μA at VVM = 48-V)

• Integrated protection features

– VM undervoltage lockout (UVLO)

– Gate drive supply undervoltage (GDUV)

– MOSFET VDS overcurrent protection (OCP)

– MOSFET shoot-through prevention

– Gate driver fault (GDF)

– Thermal warning and shutdown (OTW/OTSD)

– Fault condition indicator (nFAULT)

2 Applications

• 3-phase brushless-DC (BLDC) motor modules

• Fans, blowers, and pumps

3 Description

The DRV8353M family of devices are highlyintegrated

gate drivers for three-phase brushless DC

(BLDC) motor applications. These applications

include field-oriented control (FOC), sinusoidal current

control, and trapezoidal current control of BLDC

motors. The device variants provide optional

integrated current shunt amplifiers to support different

motor control schemes and a buck regulator to power

the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD)

architecture to decrease the number of external

components that are typically necessary for MOSFET

slew rate control and protection circuits. The SGD

architecture also optimizes dead time to prevent

shoot-through conditions, provides flexibility in

decreasing electromagnetic interference (EMI) by

MOSFET slew rate control, and protects against gate

short circuit conditions through VGS monitors. A strong

gate pulldown circuit helps prevent unwanted dV/dt

parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and

independent) are supported for simple interfacing to

the external controller. These modes can decrease

the number of outputs required of the controller for the

motor driver PWM control signals. This family of

devices also includes 1x PWM mode for simple

sensored trapezoidal control of a BLDC motor by

using an internal block commutation table.