丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN；DRV8353M 100-V Three-Phase Smart Gate Driver

文件：3.15245 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN(RTA)；DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件：3.18085 Mbytes 页数：76 Pages

TI

德州仪器

丝印：DRV8353SM；Package：WQFN；DRV8353M 100-V Three-Phase Smart Gate Driver

文件：3.15245 Mbytes 页数：76 Pages

TI

德州仪器