丝印：DRV8363；Package：VQFN(RGZ)；DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • AEC-Q100 Test Guidance for automotive applications – Device ambient temperature: –40°C to +125°C • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 8 to 85V wide operating voltage range – Bootstrap architecture for high-side gate driver – Supports 50

文件：2.68369 Mbytes 页数：87 Pages

TI

德州仪器

丝印：DRV8363；Package：VQFN(RGZ)；DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • AEC-Q100 Test Guidance for automotive applications – Device ambient temperature: –40°C to +125°C • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 8 to 85V wide operating voltage range – Bootstrap architecture for high-side gate driver – Supports 50

文件：2.68369 Mbytes 页数：87 Pages

TI

德州仪器

DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features • AEC-Q100 Test Guidance for automotive applications – Device ambient temperature: –40°C to +125°C • Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 8 to 85V wide operating voltage range – Bootstrap architecture for high-side gate driver – Supports 50

文件：2.68369 Mbytes 页数：87 Pages

TI

德州仪器