DRV8363-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 Test Guidance for automotive

applications

– Device ambient temperature: –40°C to +125°C

• Three phase half-bridge gate driver

– Drives six N-channel MOSFETs (NMOS)

– 8 to 85V wide operating voltage range

– Bootstrap architecture for high-side gate driver

– Supports 50mA average gate switching current

enables driving 400nC MOSFETs at 20kHz

– Trickle charge pump to support 100% PWM

duty cycle and to generate overdrive supply

to drive external cut-off or reverse polarity

protection circuit

• Smart Gate Drive architecture

– 15-level configurable peak gate drive current up

to 1000 / 2000mA (source / sink)

– Closed-loop automatic deadtime insertion

based on gate-source voltage monitoring

– Configurable soft shutdown to minimize

inductive voltage spikes during overcurrent

shutdown

• Low-side Current Sense Amplifier

– 1mV low input offset across temperature

– 4-level adjustable gain

– Adjustable output bias to support unidirectional

or bidirectional sensing

• SPI-based detailed configuration and diagnostics

• DRVOFF pin to disable driver independently

• High voltage wake up pin (nSLEEP)

• Dedicated ASCIN pin to control motor braking

(active short circuit)

• 6x, 3x, 1x, and Independent PWM Modes

• Supports 3.3V and 5V Logic Inputs

• Integrated protection features

– Battery and power supply voltage monitors

– MOSFET VDS and Rsense over current monitors

– MOSFET VGS gate fault monitors

– Device thermal warning and shutdown

– Fault condition indicator pin

2 Applications

• 48V Automotive Motor Control Applications

– Fuel, Water and Oil Pumps

– Automotive Fans and Blowers

– Automotive Body Motors

– Transmission Actuators

– Automotive BLDC and PMSM motors

• E-Mobility, E-Bikes, E-Scooters

3 Description

The DRV8363-Q1 is an integrated smart gate driver

for 48V automotive three-phase BLDC applications.

The device provides three half-bridge gate drivers,

each capable of driving high-side and low-side

N-channel power MOSFETs. The DRV8363-Q1

generates the correct gate drive voltages using an

external 12V supply and an integrated bootstrap diode

for the high-side MOSFETs. The Smart Gate Drive

architecture supports configurable peak gate drive

current from 16mA up to 1A source and 2A sink. The

DRV8363-Q1 can operate with a wide input range

from 8V to 85V at the motor connection. A trickle

charge pump allows for the gate drivers to support

100% PWM duty cycle control and provides overdrive

gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense

amplifiers to support resistor based low-side

current sensing. The low offset of the amplifiers

enables the system to obtain precise motor current

measurements.

A wide range of diagnostics and protection features

are integrated with the DRV8363-Q1 enables a robust

motor drive system design and helps eliminate the

need of external components. The highly configurable

device response allows the device to be integrated

seamlessly into a variety of system designs.