DRV835XF中文资料德州仪器数据手册PDF规格书

1 Features

• 9 to 100-V, Triple half-bridge gate driver

– Optional triple low-side current shunt amplifiers

• Functional Safety Quality-Managed

– Documentation available to aid IEC 61800-5-2

functional safety system design

• Smart gate drive architecture

– Adjustable slew rate control for EMI

performance

– VGS handshake and minimum dead-time

insertion to prevent shoot-through

– 50-mA to 1-A peak source current

– 100-mA to 2-A peak sink current

– dV/dt mitigation through strong pulldown

• Integrated gate driver power supplies

– High-side doubler charge pump For 100%

PWM duty cycle control

– Low-side linear regulator

• Integrated triple current shunt amplifiers

– Adjustable gain (5, 10, 20, 40 V/V)

– Bidirectional or unidirectional support

• 6x, 3x, 1x, and independent PWM modes

– Supports 120° sensored operation

• SPI or hardware interface available

• Low-power sleep mode (20 μA at VVM = 48-V)

• Integrated protection features

– VM undervoltage lockout (UVLO)

– Gate drive supply undervoltage (GDUV)

– MOSFET VDS overcurrent protection (OCP)

– MOSFET shoot-through prevention

– Gate driver fault (GDF)

– Thermal warning and shutdown (OTW/OTSD)

– Fault condition indicator (nFAULT)

2 Applications

• 3-phase brushless-DC (BLDC) motor modules

• Servo drives, Factory automation

• Linear motor transport systems

• Industrial collaborative robot

• Autonomous Guided Vehicle, Delivery Drones

• E-Bikes, E-scooters, and E-mobility

3 Description

The DRV835xF family of devices are highly-integrated

gate drivers for three-phase brushless DC (BLDC)

motor applications. The device variants provide

optional integrated current shunt amplifiers to support

different motor control schemes.

The DRV835xF uses smart gate drive (SGD)

architecture to decrease the number of external

components that are typically necessary for MOSFET

slew rate control and protection circuits. The

SGD architecture also optimizes dead time to

prevent shoot-through conditions, provides flexibility

in decreasing electromagnetic interference (EMI) by

MOSFET slew rate control, and protects against gate

short circuit conditions through VGS monitors. A strong

gate pulldown circuit helps prevent unwanted dV/dt

parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and

independent) are supported for simple interfacing to

the external controller. These modes can decrease

the number of outputs required of the controller for

the motor driver PWM control signals. This family

of devices also includes 1x PWM mode for simple

sensored trapezoidal control of a BLDC motor by

using an internal block commutation table.