DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

ESD Protection Diodes

文件：286.97 Kbytes 页数：9 Pages

ONSEMI

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ESD8118MUTAG

文件：292.08 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Line

The ESD8351 Series ESD protection diodes are designed to protect high speed data lines from ESD. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. Features • Low Capacitance (0.55 pF Max, I/O to GND)

文件：501.14 Kbytes 页数：10 Pages

ONSEMI

安森美半导体