80V 175?C N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•High Conversion Efficiency\n•Low RDS(ON) – Minimizes On-State Losses\n;

Diodes

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80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.\n\n •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•High Conversion Efficiency\n•Lead-Free Finish; RoHS Compliant (Notes 1 & 2)\n•The DMTH8008LPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactur;

Diodes

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80V +175°C N-Channel Enhancement Mode MOSFE

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in DC-DC converters and load switches.

Diodes

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

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DIODES

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80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

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DIODES

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3 PHASE BRIDGE MODULES

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MICROSEMI

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