80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

文件：467.46 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HZ8；Package：PowerDI3333-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

文件：467.46 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HZ8；Package：PowerDI3333-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

文件：467.46 Kbytes 页数：7 Pages

DIODES

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

文件：467.37 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HZ8；Package：PowerDI3333-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

文件：467.37 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HZ8；Package：PowerDI3333-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

文件：467.37 Kbytes 页数：7 Pages

DIODES

美台半导体

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•Low RDS(ON) – Ensures On-State Losses are Minimized\n•Excellent Qgd × RDS(ON) Product (FOM)\n•Advanced Technology for DC-DC Converts\n•Small Form Factor Thermally Efficient Package Enables HigherDensity End Products\n•Occupies Just;

Diodes

美台半导体

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•Excellent Qgd × RDS(ON) Product (FOM)\n•Small Form Factor Thermally Efficient Package Enables Higher Density End Products\n•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Appl;

Diodes

美台半导体