N-CHANNEL ENHANCEMENT MODE MOSFET

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DIODES

美台半导体

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Rated to +175°C – Ideal for High Ambient Temperature Environments\n100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application\nLow RDS(ON) – Minimizes Power Losses\nLow QG – Minimizes Switching Losses;

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：400.74 Kbytes 页数：7 Pages

DIODES

美台半导体

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101 and supported by a PPAP. Rated to +175°C – Ideal for High Ambient Temperature Environments\n100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application\nLow RDS(ON) – Minimizes Power Losses\nLow QG – Minimizes Switching Losses;

Diodes

美台半导体