40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP. Rated to +175°C – Ideal for High Ambient Temperature Environments\n100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application\nLow RDS(ON) – Minimizes Power Losses\nLow Qg – Minimizes Switching Losses;

Diodes

美台半导体

40V +175°C N-Channel Enhancement Mode MOSFE

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.

Diodes

美台半导体