N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

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DIODES

美台半导体

丝印：58D；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

文件：601.62 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：58D；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

文件：601.62 Kbytes 页数：8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •Low On-Resistance: RDS(ON)\n•Low Input Capacitance\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant \n•For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certifiedfacilities), pleas;

Diodes

美台半导体