DMN65D8LT-13

Marking：58D；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedupto1kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomo

DMN65D8LT-7

Marking：58D；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedupto1kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomo

SMAF58CA

Marking：58D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES Forsurfacemountedapplicationsinorderto optimizeboardspace. Lowprofilepackage Glasspassivatedjunction Lowinductance PlasticpackagehasUnderwritersLaboratory Flammability

SMAF58CA

Marking：58D；Surface mount transient voltage suppressor power 200 watts

SMAF58CA

Marking：58D；Package：SMAF；Surface mount transient voltage suppressor power 200 watts