N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts q

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DIODES

美台半导体

丝印：NP；Package：X1-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts q

文件：528 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen and Antimony Free. “Green” Device \n•For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable;

Diodes

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For

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DIODES

美台半导体