DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：292.94 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：153.84 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：153.84 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：232.49 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：153.84 Kbytes 页数：5 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Diodes

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Low RDS(ON) – ensures on state losses are minimized\n•Occupies just 33% of the board area occupied by SO-8 enabling smaller end product\n•Halogen and Antimony Free. “Green” Device;

Diodes

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance \nLow Input Capacitance \nLead-Free Finish; RoHS Compliant\nHalogen and Antimony Free. “Green” Device \nQualified to AEC-Q101 Standards for High Reliability;

Diodes

美台半导体