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DMN601DMK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

文件:130.229 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601DMK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

文件:130.229 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601DWK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

文件:131.43 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601DWK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

文件:131.43 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601DWKQ

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件:579.57 Kbytes 页数:7 Pages

DIODES

美台半导体

DMN601DWKQ-7

丝印:K7K;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件:579.57 Kbytes 页数:7 Pages

DIODES

美台半导体

DMN601K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

文件:272.76 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

文件:272.76 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601TK

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

文件:272.47 Kbytes 页数:4 Pages

DIODES

美台半导体

DMN601TK-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

文件:272.47 Kbytes 页数:4 Pages

DIODES

美台半导体

技术参数

  • Automotive Compliant PPAP:

    DMN601WKQ

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.3 A

  • PD @ TA = +25°C:

    0.2 W

  • RDS(ON) Max @ VGS (10V):

    2000 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    3000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2.5 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT323

供应商型号品牌批号封装库存备注价格
DIODES
24+
15000
询价
DIODES
24+
SOT-23
1068
原装现货假一罚十
询价
DIODES/美台
23+
SOT323
12000
原装正品假一罚百!可开增票!
询价
DIODES/美台
22
SOT323
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
DIODES
2015+
SOT323
995300
原装现货价格优势-含16%增值税
询价
DIODES
25+
SOT-323
1900
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
DIODES
2016+
SOT323
18000
只做原装,假一罚十,公司可开17%增值税发票!
询价
量大可定DIODES
24+
SOT323
5000
全现原装公司现货
询价
DiodesZetex
24+
NA
3864
进口原装正品优势供应
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
更多DMN601供应商 更新时间2025-11-8 16:30:00