30V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP. Low RDS(ON) – Ensures on-state losses are minimized\nSmall, form factor thermally efficient package enables higher density end products\nOccupies only 33% of the board area occupied by SO-8 enabling smaller end products\n100% Unclamped Inductive Switch (UIS) test in production;

Diodes

美台半导体