DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

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DIODES

美台半导体

丝印：N2024U；Package：TSSOP-8；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

文件：397.85 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low Gate Threshold Voltage\n•Low On-Resistance\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant\n•Halogen and Antimony Free. “Green” Device;

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

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DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

文件：506.12 Kbytes 页数：7 Pages

DIODES

美台半导体

Mixed Signal Oscilloscopes

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