DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

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DIODES

美台半导体

丝印：CI9；Package：V-DFN2050-4；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

文件：591.3 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•ESD Protected;

Diodes

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DIODES

美台半导体

Dual N-Channel Enhancement Mode MOSFET

Application Battery protection Battery Powered Systems « Power management » Motor Control » Portable Power Adaptors

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TECHPUBLIC

台舟电子

2k x 8 3V/5V Operation Static RAM

DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE

文件：254.16 Kbytes 页数：9 Pages

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