N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 3.00mm × 2.74mm  Height = 0.275mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i

文件：571.15 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Diodes

美台半导体

丝印：OF；Package：X2-TSN3027-14；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 3.00mm × 2.74mm  Height = 0.275mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i

文件：571.15 Kbytes 页数：7 Pages

DIODES

美台半导体

U-DFN2020-6

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

DIODESINC

上传：深圳市三芯电子有限公司